NCE NCE30P30K
| Manufacturer | NCEAsian Brands |
| MPN | NCE30P30K |
| LCSC Part # | C130106 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 30A TO-252-2L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 18mΩ@10V;30mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.363nF | |
| Gate Charge(Qg) | 31.2nC@10V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE30P30K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. The device is well-suited for high-current load applications.
Features
AI Translation
- VDS = -30V, ID = -30A
- RDS(ON) < 18 mΩ at VGS = -10V
- RDS(ON) < 30 mΩ at VGS = -4.5V
- High-density cell design for ultra-low Rdson
- Fully characterized avalanche voltage and current
- Excellent stability and consistency under high EAS
- Superior package with excellent thermal dissipation
Applications
AI Translation
- High-side switch for full-bridge converters
- DC/DC converter for LCD displays
In-Stock: 9,338
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4689 | $ 0.47 |
| 10+ | $ 0.3713 | $ 3.71 |
| 30+ | $ 0.3289 | $ 9.87 |
| 100+ | $ 0.2785 | $ 27.85 |
| 500+ | $ 0.254 | $ 127.00 |
| 1,000+ | $ 0.241 | $ 241.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 250pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 18mΩ@10V;30mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.363nF | |
| Gate Charge(Qg) | 31.2nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE30P30K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. The device is well-suited for high-current load applications.
Features
AI Translation
- VDS = -30V, ID = -30A
- RDS(ON) < 18 mΩ at VGS = -10V
- RDS(ON) < 30 mΩ at VGS = -4.5V
- High-density cell design for ultra-low Rdson
- Fully characterized avalanche voltage and current
- Excellent stability and consistency under high EAS
- Superior package with excellent thermal dissipation
Applications
AI Translation
- High-side switch for full-bridge converters
- DC/DC converter for LCD displays
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
