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VISHAY IRLL110TRPBFRoHS

Manufacturer
VISHAY
MPN
IRLL110TRPBF
LCSC Part #
C128228
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 100V 1.5A SOT-223
Datasheetpdf iconVISHAY IRLL110TRPBF
In-Stock: 2,346
2,346 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9462$ 0.95
10+$ 0.8096$ 8.10
30+$ 0.7413$ 22.24
100+$ 0.6731$ 67.31
500+$ 0.6015$ 300.75
1,000+$ 0.5804$ 580.40
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingSOT-223
Configuration-
Drain to Source Voltage100V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)760mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)250pF
Gate Charge(Qg)6.1nC@5V
TypeN-Channel
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Introduction

AI Translation

Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.

Features

AI Translation
  • Surface mount
  • Available in tape and reel
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Logic-level gate drive
  • RDS(on) specified at VGS = 4 V and 5 V
  • Fast switching