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UTC 10N80L-TF2-T product image
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UTC 10N80L-TF2-TRoHS

Manufacturer
UTCAsian Brands
MPN
10N80L-TF2-T
LCSC Part #
C127032
Packaging
TO-220F2
Customer #
Key Attributes
800V 10A 5V 66W 1.1Ω@10V 1 N-channel N-Channel TO-220F2 Single FETs, MOSFETs RoHS
Datasheetpdf iconUTC 10N80L-TF2-T
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.5696$ 0.57
10+$ 0.5588$ 5.59
30+$ 0.5511$ 16.53
100+$ 0.5434$ 54.34
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUTC
PackagingTO-220F2
Drain to Source Voltage800V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
Gate Charge(Qg)-
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

UTC 10N80 is fabricated using UTC's advanced proprietary planar stripe DMOS technology, achieving excellent RDS(ON), low gate charge, and operation at low gate voltage. The device is suitable for use as a load switch or in PWM applications.

Features

AI Translation
  • R DS(ON) < 1.1 Ω at V GS = 10 V
  • Ultra-low gate charge (typical 45 nC)
  • Low reverse transfer capacitance (C RSS typical 15 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability with high ruggedness