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onsemi 2N7002
| Manufacturer | |
| MPN | 2N7002 |
| LCSC Part # | C124475 |
| Packaging | SOT-23-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 115mA SOT-23-3L |
| Datasheet |  onsemi 2N7002 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23-3L | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 115mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High Density Cell Design for Low Rps(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable High Saturation Current Capability
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0583 | $ 0.58 |
| 100+ | $ 0.0465 | $ 4.65 |
| 300+ | $ 0.0406 | $ 12.18 |
| 3,000+ | $ 0.0361 | $ 108.30 |
| 6,000+ | $ 0.0326 | $ 195.60 |
| 9,000+ | $ 0.0308 | $ 277.20 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23-3L | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 115mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High Density Cell Design for Low Rps(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable High Saturation Current Capability
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |