Nexperia BSN20BKR
| Manufacturer | |
| MPN | BSN20BKR |
| LCSC Part # | C118033 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 330mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.1pF | |
| Current - Continuous Drain(Id) | 330mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.672W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 20.2pF | |
| Gate Charge(Qg) | 490pC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch Switching circuits
In-Stock: 42,365
42,365 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0804$ 0.0796 | $ 0.40 |
| 50+ | $ 0.0637$ 0.0631 | $ 3.16 |
| 150+ | $ 0.0554$ 0.0549 | $ 8.24 |
| 500+ | $ 0.0491$ 0.0487 | $ 24.35 |
| 3,000+ | $ 0.0441$ 0.0437 | $ 131.10 |
| 6,000+ | $ 0.0416$ 0.0412 | $ 247.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.1pF | |
| Current - Continuous Drain(Id) | 330mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.672W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 20.2pF | |
| Gate Charge(Qg) | 490pC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



