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Infineon/CYPRESS S29GL128S90TFI010 product image
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Infineon/CYPRESS S29GL128S90TFI010RoHS

Manufacturer
Infineon/CYPRESS
MPN
S29GL128S90TFI010
LCSC Part #
C117905
Packaging
TSOP-56-18.5mm
Customer #
Key Attributes
2.7V~3.6V 128Mbit 33MHz Parallel TSOP-56-18.5mm Memory (ICs) RoHS
Datasheetpdf iconInfineon/CYPRESS S29GL128S90TFI010
In-Stock: 48
48 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 7.1872$ 7.19
10+$ 6.1814$ 61.81
30+$ 5.5678$ 167.03
100+$ 5.0535$ 505.35
Standard Packaging910/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerInfineon/CYPRESS
PackagingTSOP-56-18.5mm
Voltage - Supply2.7V~3.6V
Memory Size128Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency33MHz
FeaturesWrite enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)60ns
Page Programming Time (Tpp)-
Standby Supply Current100uA
InterfaceParallel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging910
Sales UnitPiece

Introduction

AI Translation

The Cypress S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Features

AI Translation
  • CMOS 3.0 Volt Core with Versatile I/O
  • 65 nm MirrorBit Eclipse Technology
  • Single supply (VCC) for read / program / erase (2.7V to 3.6V)
  • Versatile I/O Feature – Wide I/O voltage range (VIO): 1.65V to VCC
  • x16 data bus
  • Asynchronous 32-byte Page read
  • 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
  • Single word and multiple program on same word options
  • Automatic Error Checking and Correction (ECC) – internal hardware ECC with single bit error correction
  • Sector Erase – Uniform 128-kbyte sectors
  • Suspend and Resume commands for Program and Erase operations
  • Status Register, Data Polling, and Ready/Busy pin methods to determine device status
  • Advanced Sector Protection (ASP) – Volatile and non-volatile protection methods for each sector
  • Separate 1024-byte One Time Program (OTP) array with two lockable regions
  • Common Flash Interface (CFI) parameter table
  • Temperature Range / Grade – Industrial (-40℃ to +85℃) – Industrial Plus(-40℃ to +105℃) – Automotive, AEC-Q100 Grade 3 (-40℃ to +85℃) – Automotive, AEC-Q100 Grade 2 (-40℃ to +105℃)
  • 100,000 Program / Erase Cycles
  • 20 Years Data Retention
  • Packaging Options – 56-pin TSOP – 64-ball LAA Fortified BGA, 13 mm x 11 mm – 64-ball LAE Fortified BGA, 9 mm x 9 mm – 56-ball VBU Fortified BGA, 9 mm x 7 mm