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VISHAY IRFP250PBF
| Manufacturer | |
| MPN | IRFP250PBF |
| LCSC Part # | C11749 |
| Packaging | TO-247AC-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 30A TO-247AC-3 |
| Datasheet |  VISHAY IRFP250PBF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-247AC-3 | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 780pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 140nC@10V | |
| Type | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Third Generation HEXFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Features
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5387 | $ 1.54 |
| 10+ | $ 1.4184 | $ 14.18 |
| 30+ | $ 1.1988 | $ 35.96 |
| 100+ | $ 1.1207 | $ 112.07 |
| 500+ | $ 1.0866 | $ 543.30 |
| 1,000+ | $ 1.0719 | $ 1071.90 |
Standard Packaging25/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-247AC-3 | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 780pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 140nC@10V | |
| Type | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Third Generation HEXFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Features
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |