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NCE NCE01P30K product image
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NCE NCE01P30KRoHS

Manufacturer
NCEAsian Brands
MPN
NCE01P30K
LCSC Part #
C115991
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET P-CH 100V 30A TO-252-2L
Datasheetpdf iconNCE NCE01P30K

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNCE
PackagingTO-252-2L
Drain to Source Voltage100V
Output Capacitance(Coss)93pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)65mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.81nF
Gate Charge(Qg)136nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

NCE01P30K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications and features ESD protection.

Features

AI Translation
  • VDS = -100V, ID = -30A
  • RDS(ON) < 58 mΩ (at VGS = -10V, typical 44 mΩ)
  • RDS(ON) < 65 mΩ (at VGS = -4.5V, typical 48 mΩ)
  • Ultra-high density cell design
  • Advanced trench process technology
  • Reliable and durable
  • High density cell design for ultra-low on-resistance

Applications

AI Translation
  • Portable devices and battery-powered systems
In-Stock: 211
211 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7001$ 0.70
10+$ 0.5542$ 5.54
30+$ 0.4797$ 14.39
100+$ 0.4068$ 40.68
500+$ 0.363$ 181.50
1,000+$ 0.3403$ 340.30
Standard Packaging2500/Full Reel
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