ISSI IS62WV51216BLL-55TLI

The ISSIIS62WV51216ALL/IS62WV51216BLL are highspeed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISsT's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CsT is HIGH (deselected) or when CS2 is LOW (deselected) or when Cs1 is LOW,CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs.The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte UB) and Lower Byte LB) access. TheIS62WV51216ALLandIS62WV51216BLLarepackaged in the JEDEC standard 48- pin mini BGA(7.2mm x 8.7mm) and 44- Pin TSOP (TYPE II).

• High- speed access time: 45ns, 55ns
• CMOS low power operation
• 36 mW (typical) operating
• 12 μW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
• 1.65V - 2.2V VDD (62WV51216ALL)
• 2.5V - 3.6V VDD (62WV51216BLL)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead- free available