LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Infineon/CYPRESS S34ML02G100TFI000 product image
  • S34ML02G100TFI000 thumbnail 1
  • S34ML02G100TFI000 thumbnail 2
  • S34ML02G100TFI000 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Infineon/CYPRESS S34ML02G100TFI000RoHS

Manufacturer
MPN
S34ML02G100TFI000
LCSC Part #
C112425
Packaging
TSOP-48-18.4mm
Customer #
Key Attributes
SLC NAND Flash For Embedded
Datasheetpdf iconInfineon/CYPRESS S34ML02G100TFI000
In-Stock: 238
238 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 14.0787$ 14.08
10+$ 13.4336$ 134.34
30+$ 12.3122$ 369.37
100+$ 10.0809$ 1008.09
Standard Packaging96/Full Tray
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerInfineon/CYPRESS
PackagingTSOP-48-18.4mm
Memory Size2Gbit
Voltage - Supply2.7V~3.6V
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency-
FeaturesRead buffer function;Copy back write function;ECC error correction function;Hardware write protection function;Bad block management function;OTP region write protection and lock function
Data Retention - TDR (Year)10 years
Block Erase Time(tBE)3.5ms
Page Programming Time (Tpp)200us
Write Cycle Time(tWC)25ns
Standby Supply Current-
Interface-

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging96
Sales UnitPiece

Features

AI Translation
  • Density – 1 Gb/ 2 Gb / 4 Gb
  • Architecture – Input / Output Bus Width: 8-bits / 16-bits
  • Page size:
    • x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area
    • x16 = 1056 (1024 + 32) words; 32 words is spare area
  • Block size: 64 Pages
    • x8 = 128k8 + 4k8
    • x16 = 64k + 2k words
  • Plane size:
    • 1 Gb / 2 Gb: 1024 Blocks per Plane
      • x8 = 128 MB + 4 MB
      • x16 = 64M + 2M words
    • 4 Gb: 2048 Blocks per Plane
      • x8 = 256 MB + 8 MB
      • x16 = 128M + 4M words
  • Device size:
    • 1 Gb: 1 Plane per Device or 128 MB
    • 2 Gb: 2 Planes per Device or 256 MB
    • 4 Gb: 2 Planes per Device or 512 MB
  • NAND flash interface – Open NAND Flash Interface (ONFI) 1.0 compliant
  • Address, Data and Commands multiplexed
  • Supply voltage – 3.3-V device: VCC = 2.7 V ~ 3.6 V
  • Security – One Time Programmable (OTP) area
  • Hardware program/erase disabled during power transition
  • Additional features:
    • 2 Gb and 4 Gb parts support Multiplane Program and Erase commands
    • Supports Copy Back Program
    • 2 Gb and 4 Gb parts support Multiplane Copy Back Program
    • Supports Read Cache
  • Electronic signature – Manufacturer ID: 01h
  • Operating temperature:
    • Industrial: -40 ℃ to 85 ℃
    • Automotive: -40 ℃ to 105 ℃
  • Page Read / Program:
    • Random access: 25 µs (Max)
    • Sequential access: 25 ns (Min)
    • Program time / Multiplane Program time: 200 µs (Typ)
  • Block Erase (S34ML01G1) – Block Erase time: 2.0 ms (Typ)
  • Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1) – Block Erase time: 3.5 ms (Typ)
  • Reliability:
    • 100,000 Program / Erase cycles (Typ) (with 1 bit ECC per 528 bytes (x8) or 264 words (x16))
    • 10 Year Data retention (Typ)
    • For one plane structure (1-Gb density) – Block zero is valid and will be valid for at least 1,000 program - erase cycles with ECC
    • For two plane structures (2-Gb and 4-Gb densities) – Blocks zero and one are valid and will be valid for at least 1,000 program - erase cycles with ECC
  • Package options:
    • Lead Free and Low Halogen
    • 48-Pin TSOP 12 x 20 x 1.2 mm
    • 63-Ball BGA 9 x 11 x 1 mm