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onsemi FDG6322C
| Manufacturer | |
| MPN | FDG6322C |
| LCSC Part # | C112152 |
| Packaging | SC-70-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 25V 0.41A SC-70-6 |
| Datasheet |  onsemi FDG6322C |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SC-70-6 | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 410mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 5Ω@2.7V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 1.5nC@4.5V | |
| Type | N-Channel + P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features
- N-Ch 0.22 A, 25 V, RDS(ON)=4.0 Ω @ VGS = 4.5 V, RDS(ON)=5.0 Ω @ VGS = 2.7 V
- P-Ch -0.41 A, -25V, RDS(ON)=1.1 Ω @ VGS = -4.5V, RDS(ON)=1.5 Ω @ VGS = -2.7V
- Very small package outline SC70-6
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.5 V)
- Gate-Source Zener for ESD ruggedness (> 2kV Human Body Model)
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.3876 | $ 0.39 |
| 10+ | $ 0.3013 | $ 3.01 |
| 30+ | $ 0.2639 | $ 7.92 |
| 100+ | $ 0.2183 | $ 21.83 |
| 500+ | $ 0.1971 | $ 98.55 |
| 1,000+ | $ 0.1857 | $ 185.70 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SC-70-6 | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 410mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 5Ω@2.7V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 1.5nC@4.5V | |
| Type | N-Channel + P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features
- N-Ch 0.22 A, 25 V, RDS(ON)=4.0 Ω @ VGS = 4.5 V, RDS(ON)=5.0 Ω @ VGS = 2.7 V
- P-Ch -0.41 A, -25V, RDS(ON)=1.1 Ω @ VGS = -4.5V, RDS(ON)=1.5 Ω @ VGS = -2.7V
- Very small package outline SC70-6
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.5 V)
- Gate-Source Zener for ESD ruggedness (> 2kV Human Body Model)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |