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onsemi FDC3612RoHS

Manufacturer
onsemi
MPN
FDC3612
LCSC Part #
C111970
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET N-CH 100V 2.6A SuperSOT-6
Datasheetpdf icononsemi FDC3612
In-Stock: 1,112
1,112 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.5985$ 0.60
10+$ 0.4863$ 4.86
30+$ 0.431$ 12.93
100+$ 0.3741$ 37.41
500+$ 0.3415$ 170.75
1,000+$ 0.3236$ 323.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSuperSOT-6
Drain to Source Voltage100V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)135mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)660pF
Gate Charge(Qg)-
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.

Features

AI Translation
  • R DS(ON) = 135 mΩ at VGS = 6 V
  • 2.6 A, 100 V, R DS(ON) = 125 mΩ at VGS = 10 V
  • High-performance trench technology for ultra-low R DS(ON)
  • Low gate charge (14 nC typical)
  • High power and current handling capability
  • Fast switching speed

Applications

AI Translation
  • DC/DC Converter