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onsemi FDD86102LZRoHS

Manufacturer
onsemi
MPN
FDD86102LZ
LCSC Part #
C111627
Packaging
DPAK(TO-252)
Customer #
Key Attributes
MOSFET N-CH 100V 35A DPAK(TO-252)
Datasheetpdf icononsemi FDD86102LZ
In-Stock: 1,191
1,191 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.2851$ 1.29
10+$ 1.0349$ 10.35
30+$ 0.9098$ 27.29
100+$ 0.7864$ 78.64
500+$ 0.6678$ 333.90
1,000+$ 0.6288$ 628.80
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDPAK(TO-252)
Drain to Source Voltage100V
Output Capacitance(Coss)245pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)31mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.54nF
Gate Charge(Qg)-
TypeN-Channel
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Introduction

AI Translation

This N-Channel MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

Features

AI Translation
  • Shielded Gate MOSFET Technology
  • Max rDS(on)=22.5 mΩ at VGS=10 V, ID=8 A
  • Max rDS(on)=31 mΩ at VGS=4.5 V, ID=7 μA
  • HBM ESD protection level >6 kV typical
  • Very low Qg and Qgd compared to competing trench technologies
  • Fast switching speed
  • 100% UIL tested
  • RoHS Compliant

Applications

AI Translation
  • DC - DC Conversion
  • Inverter
  • Synchronous Rectifier