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Infineon IKW25N120T2 product image
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Infineon IKW25N120T2RoHS

Manufacturer
Infineon
MPN
IKW25N120T2
LCSC Part #
C111026
Packaging
TO-247-3
Customer #
Key Attributes
TrenchStop 2nd generation Series Low Loss DuoPack IGBT
Datasheetpdf iconInfineon IKW25N120T2

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247-3
Pd - Power Dissipation349W
Td(off)265ns
Operating Temperature-40℃~+175℃
Td(on)27ns
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)90pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@1.0mA
Gate Charge(Qg)120nC@15V
Vce Saturation(VCE(sat))2.2V@25A,15V
Reverse Recovery Time(trr)195ns
Switching Energy(Eoff)1.35mJ
Turn-On Energy (Eon)1.55mJ
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • Short circuit withstand time – 10μs
  • very tight parameter distribution
  • high ruggedness, temperature stable behavior
  • Easy paralleling capability due to positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
  • Qualified according to JEDEC1 for target applications
  • Pb-free lead plating; RoHS compliant

Applications

AI Translation
  • Frequency Converters
  • Uninterrupted Power Supply
In-Stock: 7,980
7,980 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.1129$ 3.11
10+$ 2.6721$ 26.72
30+$ 2.2427$ 67.28
90+$ 1.9601$ 176.41
480+$ 1.8326$ 879.65
960+$ 1.7777$ 1706.59
Standard Packaging30/Full Tube
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