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onsemi MBR1100RLGRoHS

Manufacturer
onsemi
MPN
MBR1100RLG
LCSC Part #
C110906
Packaging
DO-41
Customer #
Key Attributes
DIODE SCHOTTKY 100V DO-41
Datasheetpdf icononsemi MBR1100RLG
In-Stock: 7,080
7,080 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.165$ 0.83
50+$ 0.1283$ 6.42
150+$ 0.1125$ 16.88
500+$ 0.0928$ 46.40
2,500+$ 0.0841$ 210.25
5,000+$ 0.0788$ 394.00
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingDO-41
Diode Configuration1 Independent
Operating Junction Temperature Range-65℃~+175℃
Voltage - DC Reverse (Vr) (Max)100V
Voltage - Forward(Vf@If)790mV@1A
Reverse Leakage Current (Ir)500uA@100V
Non-Repetitive Peak Forward Surge Current50A
Current - Rectified1A
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

These rectifiers employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

Features

AI Translation
  • Low Reverse Current
  • Low Stored Charge, Majority Carrier Conduction
  • Low Power Loss/High Efficiency
  • Highly Stable Oxide Passivated Junction
  • Guard-Ring for Stress Protection
  • Low Forward Voltage
  • 175℃ Operating Junction Temperature
  • High Surge Capacity
  • These Devices are Pb-Free and are RoHS Compliant

Applications

AI Translation
  • Low-voltage, high-frequency inverters
  • Free wheeling diodes
  • Polarity protection diodes