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TI TLV314IDBVTRoHS

Manufacturer
TI
MPN
TLV314IDBVT
LCSC Part #
C108420
Packaging
SOT-23-5
Customer #
Key Attributes
Single, 5.5V, 3MHz, low quiescent current (65uA), RRIO operational amplifier
Datasheetpdf iconTI TLV314IDBVT
In-Stock: 148
148 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.5488$ 0.55
10+$ 0.4439$ 4.44
30+$ 0.3922$ 11.77
250+$ 0.3148$ 78.70
500+$ 0.2841$ 142.05
1,000+$ 0.268$ 268.00
Standard Packaging250/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ManufacturerTI
PackagingSOT-23-5
Number of Channels1
Vos - Input Offset Voltage750uV
Slew Rate1.5V/us
Input Offset Current(Ios)1pA
Input offset current drift(Ios TC)-
FeaturesEMI filtering/RF suppression;ESD protection
Operating Temperature-40℃~+125℃
Common Mode Rejection Ratio(CMRR)75dB
Ib - Input Bias Current1pA
Output Current20mA
Maximum Power Supply Range (Vdd-Vss)5.5V
Input Offset Voltage Drift(Vos TC)2uV/℃
Quiescent Current150uA
Gain Bandwidth Product3MHz
Input Voltage Noise Density16nV/√Hz@1kHz
Dual Supply-2.75V~-900mV;900mV~2.75V
Rail to RailRail-to-Rail Input, Rail-to-Rail Output
Single Supply1.8V~5.5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging250
Sales UnitPiece

Introduction

AI Translation

The TLV314 family of single-, dual-, and quadchannel operational amplifiers represents a new generation of low-power, general-purpose operational amplifiers. Rail-to-rail input and output swings (RRIO), low quiescent current (150 μA typically at 5 V) combine with a wide bandwidth of 3 MHz to make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. Additionally, the TLV314 family architecture achieves a low input bias current of 1 pA, allowing for applications with MΩ source impedances. The robust design of the TLV314 devices provides ease-of-use to the circuit designer: unity-gain stability, RRIO, capacitive loads of up to 300 pF, an integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM). These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended industrial temperature range of -40°C to +125°C.

Features

AI Translation
  • Low Offset Voltage: 0.75 mv (typ)
  • Low Input Bias Current: 1 pA (typ)
  • Wide Supply Range: 1.8 V to 5.5 V
  • Rail-to-Rail Input and Output
  • Gain Bandwidth: 3 MHz
  • Low IQ: 250 μA/Ch (max)
  • Low Noise: 16 nV/√Hz at 1 kHz
  • Internal RF/EMI Filter
  • Extended Temperature Range: -40°C to +125°C

Applications

AI Translation
  • White Goods
  • Handheld Test Equipment
  • Portable Blood Glucose Systems
  • Remote Sensing
  • Active Filters
  • Industrial Automation
  • Battery-Powered Electronics