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onsemi FQB22P10TMRoHS

Manufacturer
onsemi
MPN
FQB22P10TM
LCSC Part #
C108357
Packaging
D2PAK
Customer #
Key Attributes
MOSFET P-CH 100V 22A D2PAK
Datasheetpdf icononsemi FQB22P10TM
In-Stock: 597
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QtyUnit PriceTotal Amount
1+$ 2.0812$ 2.08
10+$ 1.8359$ 18.36
30+$ 1.6832$ 50.50
100+$ 1.5256$ 152.56
500+$ 1.4557$ 727.85
800+$ 1.4248$ 1139.84
Standard Packaging800/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingD2PAK
Drain to Source Voltage100V
Output Capacitance(Coss)600pF
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)125mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.5nF
Gate Charge(Qg)50nC@10V
TypeP-Channel
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Introduction

AI Translation

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

AI Translation
  • -22 A, -100 V, RDS(on)=125 mΩ (Max) @ VGS=-10 V, ID=-11 A
  • Low Gate Charge (Typ. 40 nC)
  • Low Crss (Typ. 160 pF)
  • 100% Avalanche Tested
  • 175°C Maximum Junction Temperature Rating

Applications

AI Translation
  • switched mode power supplies
  • audio amplifier
  • DC motor control
  • variable switching power applications