Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 40 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 50W | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 40 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 50W | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications.
Features
AI Translation
- Low collector-emitter saturation voltage
- Fast switching speed
Applications
AI Translation
- Power amplifier
- Switching circuits
In-Stock: 10,640
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4613 | $ 0.46 |
| 10+ | $ 0.359 | $ 3.59 |
| 30+ | $ 0.3152 | $ 9.46 |
| 100+ | $ 0.2599 | $ 25.99 |
| 500+ | $ 0.2356 | $ 117.80 |
| 1,000+ | $ 0.2209 | $ 220.90 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 40 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 50W | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 40 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 50W | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications.
Features
AI Translation
- Low collector-emitter saturation voltage
- Fast switching speed
Applications
AI Translation
- Power amplifier
- Switching circuits
C10617 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



