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onsemi FDMS86101RoHS

Manufacturer
onsemi
MPN
FDMS86101
LCSC Part #
C102622
Packaging
Power56-8
Customer #
Key Attributes
MOSFET N-CH 100V 60A Power56-8
Datasheetpdf icononsemi FDMS86101
In-Stock: 1,454
1,454 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.242$ 1.24
10+$ 1.0274$ 10.27
30+$ 0.9088$ 27.26
100+$ 0.7755$ 77.55
500+$ 0.6617$ 330.85
1,000+$ 0.6357$ 635.70
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower56-8
Drain to Source Voltage100V
Output Capacitance(Coss)610pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)13.5mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)3nF
Gate Charge(Qg)55nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-Channel MOSFET is produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Advanced Package and Silicon combination for low rDS(on) and high efficiency.

Features

AI Translation
  • Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
  • Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
  • MSL1 robust package design
  • 100% UIL tested
  • 100% Rg tested
  • RoHS Compliant

Applications

AI Translation
  • DC-DC Conversion
  • Power 56