ST STB13007DT4
| Manufacturer | |
| MPN | STB13007DT4 |
| LCSC Part # | C500928 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | TRANS NPN 700V 16A D2PAK |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 700V | |
| Emitter-Base Voltage VEBO | 9V | |
| DC Current Gain | 8 | |
| Pd - Power Dissipation | 80W | |
| Number | 1 NPN | |
| type | NPN | |
| Current - Collector(Ic) | 16A | |
| Operating Temperature | -65℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
Features
AI Translation
- Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability
- Integrated free-wheeling diode
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
- Fully characterized at 125 °C
- Large RBSOA In compliance with the 2002/93/EC European Directive
Applications
AI Translation
- Electronic transformers for halogen lamps
- Switch mode power supplies
In-Stock: 21
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.0719 | $ 2.07 |
| 10+ | $ 1.7594 | $ 17.59 |
| 30+ | $ 1.5625 | $ 46.88 |
| 100+ | $ 1.3623 | $ 136.23 |
| 500+ | $ 1.2712 | $ 635.60 |
| 1,000+ | $ 1.2321 | $ 1232.10 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 700V | |
| Emitter-Base Voltage VEBO | 9V | |
| DC Current Gain | 8 | |
| Pd - Power Dissipation | 80W | |
| Number | 1 NPN | |
| type | NPN | |
| Current - Collector(Ic) | 16A | |
| Operating Temperature | -65℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
Features
AI Translation
- Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability
- Integrated free-wheeling diode
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
- Fully characterized at 125 °C
- Large RBSOA In compliance with the 2002/93/EC European Directive
Applications
AI Translation
- Electronic transformers for halogen lamps
- Switch mode power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



