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MICROCHIP 25LC080C-I/MSRoHS

Produttore
Cod. Prod.
25LC080C-I/MS
Cod. LCSC
C613174
Imballo
MSOP-8
Numero Cliente
Attr. chiave
8K-256K SPI Serial EEPROM
Scheda Tecnicapdf iconMICROCHIP 25LC080C-I/MS
Parti alternative8
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 0.7548$ 0.75
200+$ 0.2933$ 58.66
500+$ 0.2825$ 141.25
1,000+$ 0.2779$ 277.90
Package Standard100/Full Tube
Prezzo migliore per quantità maggiore?
$

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
ProduttoreMICROCHIP
ImballoMSOP-8
Operating Temperature-40℃~+150℃
FeaturesHardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Memory Size8Kbit
Voltage - Supply2.5V~5.5V
Clock Frequency5MHz
Access Time-
Data Retention - TDR (Year)200 Years
Current - Supply5mA
Write Cycle Time(tWC)6ms
Standby Supply Current10uA
Write Cycle Endurance1,000,000 cycles
InterfaceSPI

Descrizione

Traduzione AI

Mid-density 8- through 256-Kbit Serial Electrically Erasable PROMs (EEPROM). The devices are organized in blocks of x8-bit memory and support the Serial Peripheral Interface (SPI) compatible serial bus architecture. Byte-level and page-level functions are supported. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

Caratteristiche

Traduzione AI
  • Maximum Clock: 5 MHz
  • Low-Power CMOS Technology:
    • Write current: 5 mA at 5.5V (maximum)
    • Read current: 5 mA at 5.5V, 5 MHz
    • Standby current: 10 μA at 5.5V
  • 1,024x8 through 32,768x8 -bit Organization
  • Byte and Page-Level Write Operations
  • Self-Timed Erase and Write Cycles (6 ms maximum)
  • Block Write Protection:
    • Protect none, 1/4, 1/2 or all of array
  • Built-in Write Protection:
    • Power-on/off data protection circuitry
    • Write enable latch
    • Write-protect pin
  • Sequential Read
  • High Reliability:
    • Endurance: >1,000,000 erase/write cycles
    • Data retention: >200 years
    • ESD protection: >4000 V
  • Temperature Range Supported:
    • Extended (H): -40℃ to +150℃
  • RoHS Compliant
  • Automotive AEC-Q100 Qualified

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