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onsemi NVHL080N120SC1A
| Fabricante | |
| Cód. da peça | NVHL080N120SC1A |
| Nº LCSC | C898294 |
| Emb. | TO-247-3 |
| Número do Cliente | |
| Atrib. princ. | 1.2kV 31A 4.3V 178W 80mΩ@20V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Folha de Dados |  onsemi NVHL080N120SC1A |
| Peças alternativas | 10 |
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-247-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 31A | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Pd - Power Dissipation | 178W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 80mΩ@20V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.112nF | |
| Gate Charge(Qg) | 56nC | |
| Vgs | ±25V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-247-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 31A | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 178W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 80mΩ@20V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.112nF | |
| Gate Charge(Qg) | 56nC | |
| Vgs | ±25V | |
| Type | N-Channel |
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Descrição
Tradução por IA
This is an N-channel enhancement-mode silicon-gate power MOSFET, suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high-speed operation and low gate drive power. This device can be driven directly by ICs.
Recursos
Tradução por IA
- Typical R DS(on) = 80 mΩ
- Ultra-low gate charge (typical Q G(tot) = 56 nC)
- Low effective output capacitance (typical C oss = 80 pF)
- 100% UIL tested
- AEC-Q101 qualified with PPAP capability
- Halogen-free, RoHS compliant (exemption 7a), Pb-free 2LI second level interconnect
Aplicações
Tradução por IA
- Automotive on-board chargers
- Automotive DC-DC converters for electric vehicles (EV)/hybrid electric vehicles (HEV)
Em estoque: 11
11 Em estoque, envio imediato
Mínimo: 1Múltiplo: 1Unidade de venda: Piece
Adicionar à Lista BOM
| Qtd. | Preço unit. | Valor total |
|---|---|---|
| 1+ | $ 13.4501 | $ 13.45 |
| 10+ | $ 11.6097 | $ 116.10 |
| 30+ | $ 10.7186 | $ 321.56 |
| 90+ | $ 9.9734 | $ 897.61 |
Encapsulamento Padrão30/Full Tube | ||
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Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-247-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 31A | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Pd - Power Dissipation | 178W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 80mΩ@20V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.112nF | |
| Gate Charge(Qg) | 56nC | |
| Vgs | ±25V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-247-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 31A | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 178W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 80mΩ@20V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.112nF | |
| Gate Charge(Qg) | 56nC | |
| Vgs | ±25V | |
| Type | N-Channel |
Reportar um erroMostrar produtos similares (0) >
Descrição
Tradução por IA
This is an N-channel enhancement-mode silicon-gate power MOSFET, suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high-speed operation and low gate drive power. This device can be driven directly by ICs.
Recursos
Tradução por IA
- Typical R DS(on) = 80 mΩ
- Ultra-low gate charge (typical Q G(tot) = 56 nC)
- Low effective output capacitance (typical C oss = 80 pF)
- 100% UIL tested
- AEC-Q101 qualified with PPAP capability
- Halogen-free, RoHS compliant (exemption 7a), Pb-free 2LI second level interconnect
Aplicações
Tradução por IA
- Automotive on-board chargers
- Automotive DC-DC converters for electric vehicles (EV)/hybrid electric vehicles (HEV)
C898294 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Peças alternativas
| MPN | Fabricante | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|
| SCT4036KEC11 | ROHM | TO-247N | 10 | $ 29.2611 | ||
| SCT2080KEHRC11 | ROHM | TO-247N | 30 | $ 24.2541 | ||
| NTHL080N120SC1A | onsemi | TO-247-3 | 0 | $ 19.0504 | ||
| SC059N120J3 | DIYI Elec Tech | TO-247-3 | 0 | $ 9.9606 | ||
| ADW120N080G2 | ANHI | TO-247-3L | 0 | $ 20.7733 | ||
| TW060N120C,S1F | TOSHIBA | TO-247 | 0 | $ 11.2846 | ||
| AOK065V120X2 | AOS | TO-247 | 0 | $ 6.1184 | ||
| TW045N120C,S1F | TOSHIBA | TO-247 | 0 | $ 17.7516 | ||
| SCT2080KEC | ROHM | TO-247-3 | 0 | $ 67.2107 | ||
| SCT2080KEGC11 | ROHM | TO-247N | 0 | $ 29.5373 |