MICROCHIP JANTXV1N5623US/TR
| Produttore | |
| Cod. Prod. | JANTXV1N5623US/TR |
| Cod. LCSC | C17447167 |
| Imballo | - |
| Numero Cliente | |
| Attr. chiave | 500ns 1kV 1.6V@3A 1A Single Diodes RoHS |
| Scheda Tecnica |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MICROCHIP | |
| Imballo | - | |
| Reverse Recovery Time (trr) | 500ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 1kV | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.6V@3A | |
| Reverse Leakage Current (Ir) | 500nA@1V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MICROCHIP | |
| Imballo | - | |
| Reverse Recovery Time (trr) | 500ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 1kV |
| Tipo | Descrizione | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.6V@3A | |
| Reverse Leakage Current (Ir) | 500nA@1V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1A |
Descrizione
This series of "fast recovery" surface mount rectifier diodes complies with MIL-PRF-19500/429 and is ideally suited for high-reliability applications where failures cannot be tolerated. These industry-qualified 1.0-ampere rated rectifiers, with working peak inverse voltages from 200 to 1000 volts, are hermetically sealed in a void-free glass construction with internal "Class 1" metallurgical bonds. These devices are also available in axial-lead package configurations for through-hole mounting (refer to a separate data sheet for 1N5615 through 1N5623). Microsemi offers many other rectifier products to meet varying current rating and recovery time speed requirements, including fast and ultrafast device types in both through-hole and surface mount packages.
Caratteristiche
- Surface mount package series, equivalent to JEDEC-registered 1N5615 through 1N5623 series
- Void-free hermetic glass encapsulation
- Triple passivation
- Internal "first-level" metallurgical bonding
- Peak working reverse voltage 200 to 1000 volts
- JAN, JANTX, JANTXV, and JANS versions available per MIL-PRF-19500/429
- Axial-lead equivalent versions also available (refer to separate datasheet for 1N5615 through 1N5623)
Applicazioni
- Fast recovery 1A rectifiers, 200 to 1000V
- General rectification applications including bridge, half-bridge, clamp diodes, etc.
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 33.5208 | $ 33.52 |
| 200+ | $ 13.3755 | $ 2675.10 |
| 500+ | $ 12.929 | $ 6464.50 |
| 1,000+ | $ 12.7073 | $ 12707.30 |
Package Standard1/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MICROCHIP | |
| Imballo | - | |
| Reverse Recovery Time (trr) | 500ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 1kV | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.6V@3A | |
| Reverse Leakage Current (Ir) | 500nA@1V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MICROCHIP | |
| Imballo | - | |
| Reverse Recovery Time (trr) | 500ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 1kV |
| Tipo | Descrizione | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.6V@3A | |
| Reverse Leakage Current (Ir) | 500nA@1V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1A |
Descrizione
This series of "fast recovery" surface mount rectifier diodes complies with MIL-PRF-19500/429 and is ideally suited for high-reliability applications where failures cannot be tolerated. These industry-qualified 1.0-ampere rated rectifiers, with working peak inverse voltages from 200 to 1000 volts, are hermetically sealed in a void-free glass construction with internal "Class 1" metallurgical bonds. These devices are also available in axial-lead package configurations for through-hole mounting (refer to a separate data sheet for 1N5615 through 1N5623). Microsemi offers many other rectifier products to meet varying current rating and recovery time speed requirements, including fast and ultrafast device types in both through-hole and surface mount packages.
Caratteristiche
- Surface mount package series, equivalent to JEDEC-registered 1N5615 through 1N5623 series
- Void-free hermetic glass encapsulation
- Triple passivation
- Internal "first-level" metallurgical bonding
- Peak working reverse voltage 200 to 1000 volts
- JAN, JANTX, JANTXV, and JANS versions available per MIL-PRF-19500/429
- Axial-lead equivalent versions also available (refer to separate datasheet for 1N5615 through 1N5623)
Applicazioni
- Fast recovery 1A rectifiers, 200 to 1000V
- General rectification applications including bridge, half-bridge, clamp diodes, etc.
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

