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Modelli EDAEasyEDA
ST SCT040H65G3AG
| Produttore | |
| Cod. Prod. | SCT040H65G3AG |
| Cod. LCSC | C5268821 |
| Imballo | H2PAK-7 |
| Numero Cliente | |
| Attr. chiave | SICFET N-CH 650V 30A H2PAK-7 |
| Scheda Tecnica |  ST SCT040H65G3AG |
| Parti alternative | 7 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | H2PAK-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 94pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Pd - Power Dissipation | 221W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 55mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 39.5nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | H2PAK-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 94pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 221W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 55mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 39.5nC | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Caratteristiche
Traduzione AI
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
Applicazioni
Traduzione AI
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Disponibile: 20
20 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 12.1982 | $ 12.20 |
| 10+ | $ 11.808 | $ 118.08 |
Package Standard1000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | H2PAK-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 94pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Pd - Power Dissipation | 221W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 55mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 39.5nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | H2PAK-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 94pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 221W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 55mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 39.5nC | |
| Type | N-Channel |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Caratteristiche
Traduzione AI
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
Applicazioni
Traduzione AI
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SCT040H120G3AG | ST | H2PAK-7 | 1 | $ 20.8949 | ||
| SCT025H120G3AG | ST | H2PAK-7 | 3 | $ 35.2269 | ||
| SCT018H65G3AG | ST | H2PAK-7 | 3 | $ 25.4883 | ||
| SCTH70N120G2V-7 | ST | H2PAK-7 | 2 | $ 47.3352 | ||
| SCTH35N65G2V-7 | ST | H2PAK-7 | 0 | $ 11.6529 | ||
| SCTH35N65G2V-7AG | ST | H2PAK-7 | 0 | $ 12.9234 | ||
| SCT027H65G3AG | ST | H2PAK-7 | 0 | $ 26.4261 |