onsemi SS26T3G
| Produttore | |
| Cod. Prod. | SS26T3G |
| Cod. LCSC | C47071 |
| Imballo | SMB(DO-214AA) |
| Numero Cliente | |
| Attr. chiave | DIODE SCHOTTKY 60V SMB(DO-214AA) |
| Scheda Tecnica | |
| Parti alternative | 20 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | SMB(DO-214AA) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 630mV@2A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 40A | |
| Current - Rectified | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | SMB(DO-214AA) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 630mV@2A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 40A | |
| Current - Rectified | 2A |
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Descrizione
Traduzione AI
employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
Caratteristiche
Traduzione AI
- Compact Package with J-Bend Leads Ideal for Automated Handling
- Highly Stable Oxide Passivated Junction
- Guardring for Overvoltage Protection
- Low Forward Voltage Drop
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free Package is Available
Applicazioni
Traduzione AI
- low voltage, high frequency switching power supplies
- free wheeling diodes
- polarity protection diodes
Disponibile: 2,085
2,085 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.1734 | $ 0.87 |
| 50+ | $ 0.1368 | $ 6.84 |
| 150+ | $ 0.1113 | $ 16.70 |
| 500+ | $ 0.0918 | $ 45.90 |
| 2,500+ | $ 0.083 | $ 207.50 |
| 5,000+ | $ 0.0778 | $ 389.00 |
Package Standard2500/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | SMB(DO-214AA) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 630mV@2A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 40A | |
| Current - Rectified | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | SMB(DO-214AA) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 630mV@2A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 40A | |
| Current - Rectified | 2A |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
Caratteristiche
Traduzione AI
- Compact Package with J-Bend Leads Ideal for Automated Handling
- Highly Stable Oxide Passivated Junction
- Guardring for Overvoltage Protection
- Low Forward Voltage Drop
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free Package is Available
Applicazioni
Traduzione AI
- low voltage, high frequency switching power supplies
- free wheeling diodes
- polarity protection diodes
C47071 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SSL510B | XCH | SMB | 795 | $ 0.1232 | ||
| SS26T3G | Tokmas | DO-214AA | 3,040 | $0.0509 $0.0565 | ||
| MBRS260T3G | onsemi | SMB(DO-214AA) | 11,030 | $ 0.1855 | ||
| NRVBS260NT3G | onsemi | SMB | 2,410 | $ 0.3429 | ||
| B260BE-13 | DIODES | SMB | 745 | $0.0654 $0.1979 | ||
| SS510L | PDW | SMB(DO-214AA) | 990 | $ 0.1612 | ||
| SS58L | Huixin | SMB | 2,470 | $0.1538 $0.1747 | ||
| SS36LB | XUMAO | SMB | 5,460 | $0.0701 $0.0778 | ||
| SS56LB | XUMAO | SMB | 8,875 | $0.1291 $0.1434 | ||
| UMW SS36B | UMW | SMB(DO-214AA) | 19,860 | $ 0.0432 | ||
| STPS3L60UY | ST | DO-214AA | 45 | $ 0.3456 | ||
| SS310T | LGE | SMB | 2,970 | $ 0.0746 | ||
| SS310LB | XUMAO | SMB | 2,915 | $0.0714 $0.0793 | ||
| NRVBSS26NT3G | onsemi | SMB | 0 | $ 0.2069 | ||
| NRVBSS26T3G | onsemi | SMB | 0 | $ 0.3635 | ||
| NRVBSS26T3G-RG01 | onsemi | SMB | 0 | $ 0.3635 | ||
| NRVBS260T3G-RG01 | onsemi | SMB | 0 | $ 0.5634 | ||
| SS3P6B | Chongqing Pingwei Tech | SMB | 0 | $ 0.0884 | ||
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| SK56L | DIYI Elec Tech | SMB | 0 | $ 0.139 |



