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Infineon BSP135IXTSA1
| Fabricant | |
| Réf. Fab. | BSP135IXTSA1 |
| Réf. LCSC | C3288806 |
| Condit. | SOT-223-4 |
| Numéro Client | |
| Caract. clés | N-channel, Current:0.12A, Voltage:600V |
| Fiche Technique |  Infineon BSP135IXTSA1 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 120mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| RDS(on) | 25Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 98pF | |
| Gate Charge(Qg) | 3.7nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 120mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| RDS(on) | 25Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 98pF | |
| Gate Charge(Qg) | 3.7nC@5V | |
| Type | N-Channel |
Signaler une erreurAfficher les produits similaires (0) >
Description
Traduction par IA
The IPDQ60R010S7 offers the best cost-performance ratio for low-frequency switching applications. As a high-voltage superjunction MOSFET, CoolMOS™ S7 features an ultra-low on-resistance RDS(on), significantly improving energy efficiency. CoolMOS™ S7 is optimized for "static switching" and high-current applications, making it ideal for solid-state relay and circuit breaker designs, as well as line rectification in SMPS and inverter topologies.
Caractéristiques
Traduction par IA
- N-channel
- Depletion mode
- Rated dv/dt
- Halogen-free per IEC61249-2-21
- Lead-free terminal plating; RoHS compliant
Applications
Traduction par IA
- Solid state relays and circuit breakers
- Diode bridge parallel/replacement in line rectification for high-power/high-performance applications such as computers, telecommunications, UPS, and solar
En stock: 143
143 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 0.8481 | $ 0.85 |
| 10+ | $ 0.8351 | $ 8.35 |
| 30+ | $ 0.8286 | $ 24.86 |
| 100+ | $ 0.8205 | $ 82.05 |
Boîtier Standard1000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 120mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| RDS(on) | 25Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 98pF | |
| Gate Charge(Qg) | 3.7nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 120mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| RDS(on) | 25Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 98pF | |
| Gate Charge(Qg) | 3.7nC@5V | |
| Type | N-Channel |
Signaler une erreurAfficher les produits similaires (0) >
Description
Traduction par IA
The IPDQ60R010S7 offers the best cost-performance ratio for low-frequency switching applications. As a high-voltage superjunction MOSFET, CoolMOS™ S7 features an ultra-low on-resistance RDS(on), significantly improving energy efficiency. CoolMOS™ S7 is optimized for "static switching" and high-current applications, making it ideal for solid-state relay and circuit breaker designs, as well as line rectification in SMPS and inverter topologies.
Caractéristiques
Traduction par IA
- N-channel
- Depletion mode
- Rated dv/dt
- Halogen-free per IEC61249-2-21
- Lead-free terminal plating; RoHS compliant
Applications
Traduction par IA
- Solid state relays and circuit breakers
- Diode bridge parallel/replacement in line rectification for high-power/high-performance applications such as computers, telecommunications, UPS, and solar
C3288806 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |