Immagini a scopo illustrativo
Modelli EDAEasyEDA
RENESAS H5N3007FL-M0-E#T2
| Produttore | |
| Cod. Prod. | H5N3007FL-M0-E#T2 |
| Cod. LCSC | C3280906 |
| Imballo | TO-220FL |
| Numero Cliente | |
| Attr. chiave | 300V-15A-MOSFET |
| Scheda Tecnica |  RENESAS H5N3007FL-M0-E#T2 |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | RENESAS | |
| Imballo | TO-220FL | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 300V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 80nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | RENESAS | |
| Imballo | TO-220FL | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 300V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 80nC@10V |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Caratteristiche
Traduzione AI
- Low on-resistance
- Typical R<sub>DS(ON)</sub> = 0.12 Ω (I<sub>D</sub> = 7.5 A, V<sub>GS</sub> = 10 V, T<sub>a</sub> = 25°C)
- Low leakage current
- High-speed switching
- Built-in fast recovery diode
Applicazioni
Traduzione AI
- Switched-mode power supplies - Active power factor correction (PFC) - Electronic lamp ballasts
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 3.677 | $ 3.68 |
| 200+ | $ 1.4227 | $ 284.54 |
| 500+ | $ 1.3733 | $ 686.65 |
| 1,000+ | $ 1.3486 | $ 1348.60 |
Package Standard1/Full Bag | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | RENESAS | |
| Imballo | TO-220FL | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 300V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 80nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | RENESAS | |
| Imballo | TO-220FL | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 300V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 80nC@10V |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Caratteristiche
Traduzione AI
- Low on-resistance
- Typical R<sub>DS(ON)</sub> = 0.12 Ω (I<sub>D</sub> = 7.5 A, V<sub>GS</sub> = 10 V, T<sub>a</sub> = 25°C)
- Low leakage current
- High-speed switching
- Built-in fast recovery diode
Applicazioni
Traduzione AI
- Switched-mode power supplies - Active power factor correction (PFC) - Electronic lamp ballasts
C3280906 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SIHF22N60E-GE3 | VISHAY | TO-220F | 5 | $ 2.8066 | ||
| STF26NM60N | ST | TO-220FP | 934 | $ 1.9001 | ||
| CMF65R190 | Cmos | TO-220F | 190 | $1.1544 $1.2151 | ||
| GC190N65FF | GOFORD | TO-220F | 36 | $ 1.1863 | ||
| TPA60R160D | WUXI UNIGROUP MICRO | TO-220F-3 | 26 | $ 1.1875 | ||
| MJF28N60 | MIRACLE POWER | TO-220F | 37 | $1.0632 $1.1191 | ||
| IPA60R190P6 | Infineon | TO-220FP-3 | 1 | $ 2.2213 | ||
| RSF50R090F | REASUNOS | TO-220F | 257 | $1.2368 $1.3018 | ||
| NCE65TF130F | NCE | TO-220F | 0 | $ 2.6969 | ||
| NCE65TF180F | NCE | TO-220F | 0 | $ 1.8267 |