Immagini a scopo illustrativo
Modelli EDAEasyEDA
onsemi NSBC114EDP6T5G
| Produttore | |
| Cod. Prod. | NSBC114EDP6T5G |
| Cod. LCSC | C896366 |
| Imballo | SOT-963-6 |
| Numero Cliente | |
| Attr. chiave | 35 408mW 100mA 50V 2 NPN (Pre-Biased) SOT-963-6 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Scheda Tecnica |  onsemi NSBC114EDP6T5G |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SOT-963-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 408mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SOT-963-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 408mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
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Descrizione
Traduzione AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Caratteristiche
Traduzione AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.1059 | $ 0.11 |
| 200+ | $ 0.041 | $ 8.20 |
| 500+ | $ 0.0396 | $ 19.80 |
| 1,000+ | $ 0.0389 | $ 38.90 |
Package Standard8000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SOT-963-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 408mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | onsemi | |
| Imballo | SOT-963-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 408mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Caratteristiche
Traduzione AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
C896366 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |