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Infineon/CYPRESS CY62128EV30LL-45SXITRoHS

Fabricant
Infineon/CYPRESS
Réf. Fab.
CY62128EV30LL-45SXIT
Réf. LCSC
C2840304
Condit.
SOIC-32
Numéro Client
Caract. clés
1-Mbit (128K × 8) Static RAM
Fiche Techniquepdf iconInfineon/CYPRESS CY62128EV30LL-45SXIT
En stock: 87
87 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
QtéPrix unit.Montant total
1+$ 2.9193$ 2.92
10+$ 2.4922$ 24.92
30+$ 2.2242$ 66.73
100+$ 1.8569$ 185.69
500+$ 1.7324$ 866.20
1,000+$ 1.6788$ 1678.80
Boîtier Standard1000/Full Reel
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Spécifications du Produit

Tout
TypeDescription
CatégorieIntegrated Circuits (ICs)/Memory/Memory
FabricantInfineon/CYPRESS
Condit.SOIC-32
Operating Temperature-40℃~+85℃
FeaturesAuto power-down function
Memory Size1Mbit
Voltage - Supply2.2V~3.6V
Access Time45ns
Current - Supply-
Standby Supply Current4uA
InterfaceParallel Port (Parallel)
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Description

Traduction par IA

The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8- bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery LifeTM (MoBL) in portable applications such as cellular telephones. The device also has an automatic power- down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE(overline) LOW).

Caractéristiques

Traduction par IA
  • Very high speed: 45 ns
  • Temperature ranges: Industrial: -40℃ to +85℃
  • Wide voltage range: 2.2 V to 3.6 V
  • Pin compatible with CY62128DV30
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 4 μA
  • Ultra low active power
    • Typical active current: 1.3 mA at f = 1 MHz
  • Easy memory expansion with CE1(overline), CE2, and OE(overline) features
  • Automatic power- down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Offered in Pb- free 32- pin small outline integrated circuit (SOIC), 32- pin thin small outline package (TSOP) Type I, and 32- pin shrunk thin small outline package (TSOP) packages