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JSMSEMI CSD19532Q5B-JSM
| Fabricant | JSMSEMIAsian Brands |
| Réf. Fab. | CSD19532Q5B-JSM |
| Réf. LCSC | C55112138 |
| Condit. | DFN-8L(5x6) |
| Numéro Client | |
| Caract. clés | 100V 100A 4V 154W 4.1mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS |
| Fiche Technique |  JSMSEMI CSD19532Q5B-JSM |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | JSMSEMI | |
| Condit. | DFN-8L(5x6) | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 590pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 154W | |
| RDS(on) | 4.1mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.92nF | |
| Gate Charge(Qg) | 59nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | JSMSEMI | |
| Condit. | DFN-8L(5x6) | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 590pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 154W | |
| RDS(on) | 4.1mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.92nF | |
| Gate Charge(Qg) | 59nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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En stock: 1,000
1,000 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 1.0884 | $ 1.09 |
| 10+ | $ 0.9125 | $ 9.13 |
| 30+ | $ 0.8163 | $ 24.49 |
| 100+ | $ 0.7072 | $ 70.72 |
| 500+ | $ 0.6583 | $ 329.15 |
| 1,000+ | $ 0.6355 | $ 635.50 |
Boîtier Standard5000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | JSMSEMI | |
| Condit. | DFN-8L(5x6) | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 590pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 154W | |
| RDS(on) | 4.1mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.92nF | |
| Gate Charge(Qg) | 59nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | JSMSEMI | |
| Condit. | DFN-8L(5x6) | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 590pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 154W | |
| RDS(on) | 4.1mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.92nF | |
| Gate Charge(Qg) | 59nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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C55112138 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |