Infineon SPP11N60C3XKSA1
| 製造商 | |
| 製造商料號 | SPP11N60C3XKSA1 |
| LCSC 編號 | C672222 |
| 包裝 | TO-220-3 |
| 客戶編號 | |
| 關鍵特性 | MOSFET N-CH 650V 11A TO-220-3 |
| 數據手冊 |
產品規格
全選
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | Infineon | |
| 包裝 | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 60nC@10V |
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | Infineon | |
| 包裝 | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A |
| 類型 | 描述 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 60nC@10V |
回報錯誤顯示相似產品 (0) >
特性
AI 翻譯
- New revolutionary high voltage technology
- Fully isolated package (2500 VAC)
- Pb-free lead plating; RoHS compliant
- Qualified according to J E D E C for target applications
- Identical low-side and high-side switch
現貨: 100
100 現貨,極速出貨
最小值: 1倍數: 1銷售單位: Piece
添加到BOM清單
| 數量 | 單價 | 總金額 |
|---|---|---|
| 1+ | $ 2.8109 | $ 2.81 |
| 10+ | $ 2.4886 | $ 24.89 |
| 50+ | $ 2.2852 | $ 114.26 |
| 100+ | $ 2.0785 | $ 207.85 |
| 500+ | $ 1.9841 | $ 992.05 |
| 1,000+ | $ 1.9434 | $ 1943.40 |
標準封裝50/Full Tube | ||
數量更多價格更優?
$
產品規格
全選
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | Infineon | |
| 包裝 | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 60nC@10V |
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | Infineon | |
| 包裝 | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A |
| 類型 | 描述 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 60nC@10V |
回報錯誤顯示相似產品 (0) >
特性
AI 翻譯
- New revolutionary high voltage technology
- Fully isolated package (2500 VAC)
- Pb-free lead plating; RoHS compliant
- Qualified according to J E D E C for target applications
- Identical low-side and high-side switch
C672222 EasyEDA 元器件庫
合規 & 出口編碼
| 類型 | 詳情 |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 類型 | 詳情 |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 類型 | 詳情 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



