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EDA模型EasyEDA
Infineon IPP048N12N3 G
| 製造商 | |
| 製造商料號 | IPP048N12N3 G |
| LCSC 編號 | C537133 |
| 包裝 | TO-220-3 |
| 客戶編號 | |
| 關鍵特性 | MOSFET 120V 100A TO-220-3 |
| 數據手冊 |  Infineon IPP048N12N3 G |
產品規格
全選
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | Infineon | |
| 包裝 | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12nF | |
| Gate Charge(Qg) | 182nC@10V |
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | Infineon | |
| 包裝 | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| 類型 | 描述 | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12nF | |
| Gate Charge(Qg) | 182nC@10V |
回報錯誤顯示相似產品 (0) >
特性
AI 翻譯
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (figure of merit)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
現貨: 3
3 現貨，極速出貨
最小值: 1倍數: 1銷售單位: Piece
添加到BOM清單
| 數量 | 單價 | 總金額 |
|---|---|---|
| 1+ | $ 5.1257 | $ 5.13 |
| 10+ | $ 4.5831 | $ 45.83 |
| 50+ | $ 4.2614 | $ 213.07 |
| 100+ | $ 3.9365 | $ 393.65 |
| 500+ | $ 3.7854 | $ 1892.70 |
| 1,000+ | $ 3.7172 | $ 3717.20 |
標準封裝50/Full Tube | ||
數量更多價格更優？
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產品規格
全選
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | Infineon | |
| 包裝 | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12nF | |
| Gate Charge(Qg) | 182nC@10V |
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | Infineon | |
| 包裝 | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| 類型 | 描述 | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 12nF | |
| Gate Charge(Qg) | 182nC@10V |
回報錯誤顯示相似產品 (0) >
特性
AI 翻譯
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (figure of merit)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
C537133 EasyEDA 元器件庫
合規 & 出口編碼
| 類型 | 詳情 |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 類型 | 詳情 |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 類型 | 詳情 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |