VBsemi Elec BSP130-VB
| 製造商 | VBsemi ElecAsian Brands |
| 製造商料號 | BSP130-VB |
| LCSC 編號 | C52209286 |
| 包裝 | SOT-223 |
| 客戶編號 | |
| 關鍵特性 | 3W 650V 1.2A 2V 8.4Ω@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS |
| 數據手冊 |
產品規格
全選
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | VBsemi Elec | |
| 包裝 | SOT-223 | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 1.2A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| RDS(on) | 8.4Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | VBsemi Elec | |
| 包裝 | SOT-223 | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 1.2A |
| 類型 | 描述 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| RDS(on) | 8.4Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Type | N-Channel |
回報錯誤顯示相似產品 (0) >
特性
AI 翻譯
- Halogen-free per IEC 61249-2-21
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Available in tape and reel
- Fast switching
- Easy to parallel
- RoHS compliant per directive 2002/95/EC
現貨: 116
116 現貨,極速出貨
最小值: 1倍數: 1銷售單位: Piece
添加到BOM清單
| 數量 | 單價 | 總金額 |
|---|---|---|
| 1+ | $ 0.5628 | $ 0.56 |
| 10+ | $ 0.4477 | $ 4.48 |
| 30+ | $ 0.3974 | $ 11.92 |
| 100+ | $ 0.3358 | $ 33.58 |
| 500+ | $ 0.3082 | $ 154.10 |
| 1,000+ | $ 0.292 | $ 292.00 |
標準封裝2500/Full Reel | ||
數量更多價格更優?
$
產品規格
全選
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | VBsemi Elec | |
| 包裝 | SOT-223 | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 1.2A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| RDS(on) | 8.4Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | VBsemi Elec | |
| 包裝 | SOT-223 | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 1.2A |
| 類型 | 描述 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| RDS(on) | 8.4Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Type | N-Channel |
回報錯誤顯示相似產品 (0) >
特性
AI 翻譯
- Halogen-free per IEC 61249-2-21
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Available in tape and reel
- Fast switching
- Easy to parallel
- RoHS compliant per directive 2002/95/EC
C52209286 EasyEDA 元器件庫
合規 & 出口編碼
| 類型 | 詳情 |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 類型 | 詳情 |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 類型 | 詳情 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



