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ElecSuper IRF540NPBF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRF540NPBF-ES
LCSC Part #
C39832212
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 100V 18A TO-220
Datasheetpdf iconElecSuper IRF540NPBF-ES
In-Stock: 235
235 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2653$ 1.33
50+$ 0.204$ 10.20
150+$ 0.1778$ 26.67
500+$ 0.145$ 72.50
2,500+$ 0.1304$ 326.00
5,000+$ 0.1216$ 608.00
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingTO-220
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)18A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)37mΩ@10V;39mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.982nF
Gate Charge(Qg)20nC@4.5V
TypeN-Channel
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Introduction

AI Translation

IRF540NPBF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRF540NPBF-ES is a lead-free product.

Features

AI Translation
  • 100V, RDS(ON) = 37 mΩ (typ.) @VGS=10V; RDS(ON) = 39 mΩ (typ.) @VGS=4.5V
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and durable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion