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EDA模型EasyEDA
VBsemi Elec IRFH5255TRPBF-VB
| 製造商 | VBsemi ElecAsian Brands |
| 製造商料號 | IRFH5255TRPBF-VB |
| LCSC 編號 | C29779661 |
| 包裝 | DFN5x6-8 |
| 客戶編號 | |
| 關鍵特性 | MOSFET N-CH 30V 120A DFN5x6-8 |
| 數據手冊 |  VBsemi Elec IRFH5255TRPBF-VB |
產品規格
全選
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | VBsemi Elec | |
| 包裝 | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.025nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 76W | |
| RDS(on) | 3mΩ@10V;5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 71nC@10V | |
| Type | N-Channel |
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | VBsemi Elec | |
| 包裝 | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.025nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| 類型 | 描述 | |
|---|---|---|
| Pd - Power Dissipation | 76W | |
| RDS(on) | 3mΩ@10V;5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 71nC@10V | |
| Type | N-Channel |
回報錯誤顯示相似產品 (0) >
特性
AI 翻譯
- Trench power MOSFET
- 100% Rg and UIS tested
應用領域
AI 翻譯
- Notebook computer core
- Voltage Regulator Module / Point-of-Load power supply
現貨: 20
20 現貨，極速出貨
最小值: 1倍數: 1銷售單位: Piece
添加到BOM清單
| 數量 | 單價 | 總金額 |
|---|---|---|
| 1+ | $ 0.778$ 0.6613 | $ 0.66 |
| 10+ | $ 0.6272$ 0.5332 | $ 5.33 |
| 30+ | $ 0.551$ 0.4684 | $ 14.05 |
| 100+ | $ 0.4764$ 0.4050 | $ 40.50 |
| 500+ | $ 0.4303$ 0.3658 | $ 182.90 |
| 1,000+ | $ 0.4081$ 0.3469 | $ 346.90 |
標準封裝5000/Full Reel | ||
數量更多價格更優？
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產品規格
全選
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | VBsemi Elec | |
| 包裝 | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.025nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 76W | |
| RDS(on) | 3mΩ@10V;5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 71nC@10V | |
| Type | N-Channel |
| 類型 | 描述 | |
|---|---|---|
| 類別 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 製造商 | VBsemi Elec | |
| 包裝 | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.025nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| 類型 | 描述 | |
|---|---|---|
| Pd - Power Dissipation | 76W | |
| RDS(on) | 3mΩ@10V;5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 71nC@10V | |
| Type | N-Channel |
回報錯誤顯示相似產品 (0) >
特性
AI 翻譯
- Trench power MOSFET
- 100% Rg and UIS tested
應用領域
AI 翻譯
- Notebook computer core
- Voltage Regulator Module / Point-of-Load power supply
C29779661 EasyEDA 元器件庫
合規 & 出口編碼
| 類型 | 詳情 |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 類型 | 詳情 |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 類型 | 詳情 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |