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Infineon IPB65R095C7
| Manufacturer | |
| MPN | IPB65R095C7 |
| LCSC Part # | C536633 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 15A TO-263 |
| Datasheet |  Infineon IPB65R095C7 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 128W | |
| Reverse Transfer Capacitance (Crss@Vds) | 763pF | |
| RDS(on) | 95mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.14nF | |
| Gate Charge(Qg) | 45nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 128W | |
| Reverse Transfer Capacitance (Crss@Vds) | 763pF | |
| RDS(on) | 95mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.14nF | |
| Gate Charge(Qg) | 45nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Features
AI Translation
- Increased MOSFET dv/dt ruggedness
- Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
- Best in class RDS(on) /package
- Easy to use/drive
- Pb-free plating, halogen free mold compound
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Applications
AI Translation
- PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar.
In-Stock: 11
11 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 12.829 | $ 12.83 |
| 10+ | $ 11.1301 | $ 111.30 |
| 30+ | $ 10.0955 | $ 302.87 |
| 100+ | $ 9.2274 | $ 922.74 |
Standard Packaging1000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 128W | |
| Reverse Transfer Capacitance (Crss@Vds) | 763pF | |
| RDS(on) | 95mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.14nF | |
| Gate Charge(Qg) | 45nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 128W | |
| Reverse Transfer Capacitance (Crss@Vds) | 763pF | |
| RDS(on) | 95mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.14nF | |
| Gate Charge(Qg) | 45nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Features
AI Translation
- Increased MOSFET dv/dt ruggedness
- Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
- Best in class RDS(on) /package
- Easy to use/drive
- Pb-free plating, halogen free mold compound
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Applications
AI Translation
- PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar.
C536633 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| RS65R190S | REASUNOS | TO-263 | 468 | $1.0182 $1.0717 | ||
| ASB65R220E | ANHI | TO-263 | 136 | $ 1.109 | ||
| STB35N65DM2 | ST | D2PAK | 111 | $ 6.3572 | ||
| STB21N65M5 | ST | D2PAK | 6 | $ 15.0197 | ||
| NCE65T180D | NCE | TO-263 | 1,069 | $ 2.5345 | ||
| GC180N65MF | GOFORD | TO-263 | 70 | $ 1.7509 | ||
| NCE65TF099D | NCE | TO-263 | 1,401 | $ 3.1498 | ||
| IPB60R160P6 | Infineon | TO-263 | 0 | $ 5.9462 | ||
| FCB125N65S3 | onsemi | D2PAK | 0 | $ 6.1736 | ||
| TP65H050G4BS | Transphorm | TO-263 | 0 | $ 20.4899 |