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TECH PUBLIC DMN6075S
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | DMN6075S |
| LCSC Part # | C5122015 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 60V 3A SOT-23 |
| Datasheet |  TECH PUBLIC DMN6075S |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 500mV | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| RDS(on) | 125mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 247pF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| RDS(on) | 125mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 247pF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This power MOSFET is fabricated using Wisdom's advanced planar stripe DMOS technology. This state-of-the-art technology is specifically designed to minimize on-resistance while providing high avalanche ruggedness. These devices are ideally suited for high-efficiency switch-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.
Features
AI Translation
- VDS = 650 V, ID = 7 A, RDS(ON) < 1.2 Ω at VGS = 10 V
- Gate charge (typical 28 nC)
- Improved dv/dt capability with high noise immunity
- 100% avalanche tested
- Maximum junction temperature range (150°C)
Applications
AI Translation
- Load/Power Switching
- Interfacing Switching
- Battery Management for Ultra Small Portable
- Logic Level Shift
In-Stock: 6,390
6,390 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0669 | $ 0.67 |
| 100+ | $ 0.054 | $ 5.40 |
| 300+ | $ 0.0476 | $ 14.28 |
| 3,000+ | $ 0.0384 | $ 115.20 |
| 6,000+ | $ 0.0346 | $ 207.60 |
| 9,000+ | $ 0.0327 | $ 294.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 500mV | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| RDS(on) | 125mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 247pF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| RDS(on) | 125mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 247pF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This power MOSFET is fabricated using Wisdom's advanced planar stripe DMOS technology. This state-of-the-art technology is specifically designed to minimize on-resistance while providing high avalanche ruggedness. These devices are ideally suited for high-efficiency switch-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.
Features
AI Translation
- VDS = 650 V, ID = 7 A, RDS(ON) < 1.2 Ω at VGS = 10 V
- Gate charge (typical 28 nC)
- Improved dv/dt capability with high noise immunity
- 100% avalanche tested
- Maximum junction temperature range (150°C)
Applications
AI Translation
- Load/Power Switching
- Interfacing Switching
- Battery Management for Ultra Small Portable
- Logic Level Shift
C5122015 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| AO3422 | TECH PUBLIC | SOT-23 | 18,610 | $ 0.0623 | ||
| DMN6140L | TECH PUBLIC | SOT-23 | 7,140 | $ 0.0483 | ||
| AP2310GN | TECH PUBLIC | SOT-23 | 5,050 | $ 0.0697 | ||
| SI2308A | TECH PUBLIC | SOT-23 | 3,380 | $ 0.0743 | ||
| ZXMN6A07FTA | TECH PUBLIC | SOT-23 | 3,075 | $ 0.1739 | ||
| TPM60V3NS3 | TECH PUBLIC | SOT-23 | 2,795 | $ 0.1483 | ||
| NTR5198NLT1G | TECH PUBLIC | SOT-23 | 6,330 | $ 0.0841 | ||
| TPQM6008K | TECH PUBLIC | SOT-23 | 2,650 | $0.0458 $0.0482 | ||
| TPUT3N06G-AE3-R | TECH PUBLIC | SOT-23 | 4,070 | $ 0.0521 | ||
| SI2308BDS | TECH PUBLIC | SOT-23 | 6,610 | $ 0.079 |