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XNRUSEMI XR30P02 product image
  • XR30P02 thumbnail 1
  • XR30P02 thumbnail 2
  • XR30P02 thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
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XNRUSEMI XR30P02RoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR30P02
LCSC Part #
C42456922
Packaging
TO-252-3L
Customer #
Key Attributes
MOSFET P-CH 20V 30A TO-252-3L
Datasheetpdf iconXNRUSEMI XR30P02
In-Stock: 2,160
2,160 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0712$ 0.71
100+$ 0.0567$ 5.67
300+$ 0.0495$ 14.85
2,500+$ 0.044$ 110.00
5,000+$ 0.0397$ 198.50
10,000+$ 0.0375$ 375.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingTO-252-3L
Drain to Source Voltage20V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation3.9W
RDS(on)15mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)279pF
Number1 P-Channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)19nC@6V
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The XR30P02 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The XR30P02 complies with RoHS and green product requirements, is 100% tested for avalanche energy capability (EAS), and carries full functional reliability qualification.

Features

AI Translation
  • Green/RoHS-compliant devices
  • Ultra-low gate charge
  • Excellent Cdv/dt immunity
  • Advanced high cell density trench technology