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Infineon BGA 7L1BN6 E6327 product image
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Infineon BGA 7L1BN6 E6327RoHS

Manufacturer
MPN
BGA 7L1BN6 E6327
LCSC Part #
C534173
Packaging
TSNP-6
Customer #
Key Attributes
1.5V~3.6V 13.6dB 716MHz~960MHz 0.75dB -1dBm 4.9mA TSNP-6 RF Amplifiers RoHS
Datasheetpdf iconInfineon BGA 7L1BN6 E6327
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6322$ 0.63
10+$ 0.5055$ 5.06
30+$ 0.4421$ 13.26
100+$ 0.3787$ 37.87
500+$ 0.3413$ 170.65
1,000+$ 0.3218$ 321.80
Standard Packaging15000/Full Reel
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Products Specifications

All
TypeDescription
CategoryRF and Wireless/RF Amplifiers
ManufacturerInfineon
PackagingTSNP-6
Voltage - Supply1.5V~3.6V
Operating Temperature-40℃~+85℃
Input Return Loss12dB
Gain13.6dB
Frequency Range716MHz~960MHz
Noise Figure0.75dB
Output Return Loss13dB
FeaturesVariable gain control;Low-power mode;Digital control interface
IP35dBm
P1dB-1dBm
Current - Supply4.9mA

Introduction

AI Translation

The BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHz to 960 MHz. The LNA provides 13.6 dB gain and 0.75 dB noise figure at a current consumption of 4.9 mA in the application configuration described in Chapter 3. In bypass mode the LNA provides an insertion loss of -2.2 dB. It operates from 1.5 V to 3.6 V supply.

Features

AI Translation
  • Insertion power gain: 13.6 dB
  • Low noise figure: 0.75 dB
  • Low current consumption: 4.9 mA
  • Insertion Loss in bypass mode: -2.2 dB
  • Operating frequencies: 716 - 960 MHz
  • Two-state control: Bypass- and High gain-Mode
  • Supply voltage: 1.5 V to 3.6 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7×1.1 mm²)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • Pb-free (RoHS compliant) package