onsemi FQPF7P20
| Manufacturer | |
| MPN | FQPF7P20 |
| LCSC Part # | C899400 |
| Packaging | TO-220F-3 |
| Customer # | |
| Key Attributes | 200V 5.2A 5V 690mΩ@10V 1 P-Channel TO-220F-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 690mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 25nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This P-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, provide superior switching performance, and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor controls, and variable switching power supply applications.
Features
- -5.2 A, -200 V, RDS(on) = 690 mΩ (max) at VGS = -10 V, ID = -2.6 A
- Low gate charge (typical 19 nC)
- Low Crss (typical 25 pF)
- 100% avalanche tested
Applications
- Switch-mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power supply applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.5457 | $ 1.55 |
| 10+ | $ 1.2848 | $ 12.85 |
| 50+ | $ 1.142 | $ 57.10 |
| 100+ | $ 0.9793 | $ 97.93 |
| 500+ | $ 0.9072 | $ 453.60 |
| 1,000+ | $ 0.875 | $ 875.00 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 690mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 25nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This P-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, provide superior switching performance, and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor controls, and variable switching power supply applications.
Features
- -5.2 A, -200 V, RDS(on) = 690 mΩ (max) at VGS = -10 V, ID = -2.6 A
- Low gate charge (typical 19 nC)
- Low Crss (typical 25 pF)
- 100% avalanche tested
Applications
- Switch-mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power supply applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



