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onsemi FDPF5N60NZRoHS

Manufacturer
onsemi
MPN
FDPF5N60NZ
LCSC Part #
C330167
Packaging
TO-220F
Customer #
Key Attributes
MOSFET N-CH 600V 4.5A TO-220F
Datasheetpdf icononsemi FDPF5N60NZ
In-Stock: 1
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Minimum: 1Multiple: 1Sales Unit: Piece
QtyUnit PriceTotal Amount
1+$ 1.1708$ 1.17
10+$ 0.9716$ 9.72
50+$ 0.863$ 43.15
100+$ 0.7393$ 73.93
500+$ 0.685$ 342.50
1,000+$ 0.6593$ 659.30
Standard Packaging50/Full Tube

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-220F
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)4.5A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
Gate Charge(Qg)13nC@10V
TypeN-Channel
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Introduction

AI Translation

UniFETTM II MOSFET is high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features

AI Translation
  • RDS(on)=1.65 Ω (Typ.) @ VGS=10 V, ID=2.25 A
  • Low Gate Charge (Typ. 10 nC)
  • Low Crss (Typ. 5 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • ESD Improved Capability
  • RoHS Compliant

Applications

AI Translation
  • LCD / LED / PDP TV
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply