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HUAYI HYG060N08NS1DRoHS

Manufacturer
HUAYIAsian Brands
MPN
HYG060N08NS1D
LCSC Part #
C2827238
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET N-CH 80V 80A TO-252-2L
Datasheetpdf iconHUAYI HYG060N08NS1D
In-Stock: 1,705
1,705 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3877$ 1.94
50+$ 0.3092$ 15.46
150+$ 0.2756$ 41.34
500+$ 0.2336$ 116.80
2,500+$ 0.1965$ 491.25
5,000+$ 0.1852$ 926.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUAYI
PackagingTO-252-2L
Operating Temperature-55℃~+175℃
Drain to Source Voltage80V
Output Capacitance(Coss)1.15nF
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.96nF
Gate Charge(Qg)48nC
TypeN-Channel
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Features

AI Translation
  • 80V/80A
  • RDS(ON)=5.7mΩ (typ.) @ VGS = 10V
  • 100% Avalanche Tested
  • Reliable and Rugged
  • Lead-Free and Green Devices Available (RoHS Compliant)

Applications

AI Translation
  • Switching application
  • Power management for inverter systems