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Infineon IRL540NPBFRoHS

Manufacturer
Infineon
MPN
IRL540NPBF
LCSC Part #
C111607
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 100V 36A TO-220AB
Datasheetpdf iconInfineon IRL540NPBF
In-Stock: 722
722 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.1855$ 1.19
10+$ 0.9939$ 9.94
50+$ 0.8899$ 44.50
100+$ 0.7714$ 77.14
500+$ 0.7194$ 359.70
1,000+$ 0.6951$ 695.10
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Output Capacitance(Coss)350pF
Pd - Power Dissipation140W
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)63mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)74nC
Vgs±16V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Lead-Free
  • Logic-Level Gate Drive
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated