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Hangzhou Silan Microelectronics SVF14N65CFJ product image
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Hangzhou Silan Microelectronics SVF14N65CFJRoHS

Manufacturer
MPN
SVF14N65CFJ
LCSC Part #
C601615
Packaging
TO-220
Customer #
Key Attributes
650V 14A 2V 45W 600mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconHangzhou Silan Microelectronics SVF14N65CFJ
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.4411$ 1.44
10+$ 1.2445$ 12.45
50+$ 1.147$ 57.35
100+$ 1.0496$ 104.96
500+$ 0.9911$ 495.55
1,000+$ 0.9602$ 960.20
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHangzhou Silan Microelectronics
PackagingTO-220
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)14A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)6.2pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.67nF
Gate Charge(Qg)32.5nC@10V

Introduction

AI Translation

SVF14N65CFJ is an N-channel enhancement-mode power MOSFET fabricated using Silan's proprietary F-Cell structure VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.

Features

AI Translation
  • 14A, 650V, R<sub>DS(on)</sub> (typ.) = 0.6 Ω @ V<sub>GS</sub> = 10 V
  • Low gate charge
  • Low C<sub>rss</sub>
  • Fast switching
  • Improved dv/dt capability

Applications

AI Translation
  • AC-DC power supply
  • DC-DC converter
  • H-bridge PWM motor driver