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luxin-semi YGW60N65F1A2RoHS

Manufacturer
luxin-semiAsian Brands
MPN
YGW60N65F1A2
LCSC Part #
C4153740
Packaging
TO-247
Customer #
Key Attributes
IGBT 650V 60A TO-247
Datasheetpdf iconluxin-semi YGW60N65F1A2
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturerluxin-semi
PackagingTO-247
Td(off)165ns
Pd - Power Dissipation312W
Td(on)56ns
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)70pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Operating Temperature-40℃~+175℃
Vce Saturation(VCE(sat))2.2V@60A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)90ns
Switching Energy(Eoff)890uJ
Turn-On Energy (Eon)2.2mJ
Input Capacitance(Cies)3.8nF
Gate Charge(Qg)158nC@15V
Output Capacitance(Coes)130pF
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Features

AI Translation
  • High breakdown voltage up to 650V for improved reliability
  • Trench-Stop Technology offering: High speed switching, High ruggedness, temperature stable, Low VCEsat
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Enhanced avalanche capability

Applications

AI Translation
  • Uninterruptible Power Supplies
  • Inverter
  • Welding Converters
  • PFC applications
  • Converter with high switching frequency