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YANGJIE MG75U12MRGJ
| Manufacturer | YANGJIEAsian Brands |
| MPN | MG75U12MRGJ |
| LCSC Part # | C781199 |
| Packaging | - |
| Customer # | |
| Key Attributes | 420W 75A 1.2kV Single IGBTs RoHS |
| Datasheet |  YANGJIE MG75U12MRGJ |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | YANGJIE | |
| Packaging | - | |
| Td(off) | 248ns | |
| Pd - Power Dissipation | 420W | |
| Td(on) | 80ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | 2.1V | |
| Reverse Recovery Time(trr) | 160ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 4.9mJ | |
| Turn-On Energy (Eon) | 7.45mJ | |
| Input Capacitance(Cies) | 5.5nF | |
| Output Capacitance(Coes) | 400pF | |
| Gate Charge(Qg) | 780nC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | YANGJIE | |
| Packaging | - | |
| Td(off) | 248ns | |
| Pd - Power Dissipation | 420W | |
| Td(on) | 80ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | 2.1V | |
| Reverse Recovery Time(trr) | 160ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 4.9mJ | |
| Turn-On Energy (Eon) | 7.45mJ | |
| Input Capacitance(Cies) | 5.5nF | |
| Output Capacitance(Coes) | 400pF | |
| Gate Charge(Qg) | 780nC@15V |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | YANGJIE | |
| Packaging | - | |
| Td(off) | 248ns | |
| Pd - Power Dissipation | 420W | |
| Td(on) | 80ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | 2.1V | |
| Reverse Recovery Time(trr) | 160ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 4.9mJ | |
| Turn-On Energy (Eon) | 7.45mJ | |
| Input Capacitance(Cies) | 5.5nF | |
| Output Capacitance(Coes) | 400pF | |
| Gate Charge(Qg) | 780nC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | YANGJIE | |
| Packaging | - | |
| Td(off) | 248ns | |
| Pd - Power Dissipation | 420W | |
| Td(on) | 80ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | 2.1V | |
| Reverse Recovery Time(trr) | 160ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 4.9mJ | |
| Turn-On Energy (Eon) | 7.45mJ | |
| Input Capacitance(Cies) | 5.5nF | |
| Output Capacitance(Coes) | 400pF | |
| Gate Charge(Qg) | 780nC@15V |
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |