DIODES DMG3415U-7
| Manufacturer | |
| MPN | DMG3415U-7 |
| LCSC Part # | C96616 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 4A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 900mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 42.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 294pF | |
| Gate Charge(Qg) | 9.1nC |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 3kV
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable
Applications
AI Translation
- DC-DC Converters
- Power Management Functions
In-Stock: 10,190
10,190 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1216 | $ 0.61 |
| 50+ | $ 0.0962 | $ 4.81 |
| 150+ | $ 0.0835 | $ 12.53 |
| 500+ | $ 0.074 | $ 37.00 |
| 3,000+ | $ 0.0636 | $ 190.80 |
| 6,000+ | $ 0.0598 | $ 358.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 900mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 42.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 294pF | |
| Gate Charge(Qg) | 9.1nC |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 3kV
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable
Applications
AI Translation
- DC-DC Converters
- Power Management Functions
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



