LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
onsemi FDN302P product image
  • FDN302P thumbnail 1
  • FDN302P thumbnail 2
  • FDN302P thumbnail 3
  • Pinout
  • Footprint
Images for reference only

onsemi FDN302PRoHS

Manufacturer
onsemi
MPN
FDN302P
LCSC Part #
C96567
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 2.4A SOT-23
Datasheetpdf icononsemi FDN302P
In-Stock: 3
3 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
QtyUnit PriceTotal Amount
1+$ 0.6791$ 0.68
10+$ 0.5752$ 5.75
30+$ 0.5297$ 15.89
100+$ 0.4744$ 47.44
500+$ 0.4501$ 225.05
1,000+$ 0.4143$ 414.30
Standard Packaging3000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.4A
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)112pF
RDS(on)55mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)882pF
Gate Charge(Qg)14nC@10V
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This P-Channel 2.5V specified MOSFET uses a rugged gate version of ON’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

AI Translation
  • –20 V, –2.4 A. RDS(ON)=0.055 Ω @ VGS=-4.5 V
  • RDS(ON)=0.080 Ω @ VGS=-2.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications

AI Translation
  • Power management
  • Load switch
  • Battery protection