Shikues SDI2085
| Manufacturer | ShikuesAsian Brands |
| MPN | SDI2085 |
| LCSC Part # | C962719 |
| Packaging | DFN-6L(2x2) |
| Customer # | |
| Key Attributes | MOSFET P-CH 15V 8.5A DFN-6L(2x2) |
| Datasheet | Shikues SDI2085 |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shikues | |
| Packaging | DFN-6L(2x2) | |
| Drain to Source Voltage | 15V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3.3W | |
| RDS(on) | 45mΩ@1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 25nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shikues | |
| Packaging | DFN-6L(2x2) | |
| Drain to Source Voltage | 15V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.3W | |
| RDS(on) | 45mΩ@1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 25nC@4.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology has been specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency fast-switching applications.
Features
AI Translation
- 15V, -8.5A, R DS(ON) = 25mΩ at VGS = -4.5V
- Improved dv/dt capability
- Fast switching
- Green device options available
- Suitable for -1.8V gate drive applications
Applications
AI Translation
- Laptop - Load Switch - Battery Protection - Handheld Instruments
In-Stock: 2,335
2,335 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0788$ 0.0749 | $ 0.37 |
| 50+ | $ 0.0623$ 0.0592 | $ 2.96 |
| 150+ | $ 0.0541$ 0.0514 | $ 7.71 |
| 500+ | $ 0.0479$ 0.0456 | $ 22.80 |
| 3,000+ | $ 0.0411$ 0.0391 | $ 117.30 |
| 6,000+ | $ 0.0386$ 0.0367 | $ 220.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shikues | |
| Packaging | DFN-6L(2x2) | |
| Drain to Source Voltage | 15V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3.3W | |
| RDS(on) | 45mΩ@1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 25nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shikues | |
| Packaging | DFN-6L(2x2) | |
| Drain to Source Voltage | 15V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.3W | |
| RDS(on) | 45mΩ@1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 25nC@4.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology has been specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency fast-switching applications.
Features
AI Translation
- 15V, -8.5A, R DS(ON) = 25mΩ at VGS = -4.5V
- Improved dv/dt capability
- Fast switching
- Green device options available
- Suitable for -1.8V gate drive applications
Applications
AI Translation
- Laptop - Load Switch - Battery Protection - Handheld Instruments
C962719 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



