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onsemi MUN5214DW1T1GRoHS

Manufacturer
onsemi
MPN
MUN5214DW1T1G
LCSC Part #
C94403
Packaging
SOT-363
Customer #
Key Attributes
TRANS PREBIAS 50V SOT-363
Datasheetpdf icononsemi MUN5214DW1T1G
In-Stock: 6,290
6,290 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit PriceTotal Amount
10+$ 0.0633$ 0.63
100+$ 0.0522$ 5.22
300+$ 0.0466$ 13.98
3,000+$ 0.0425$ 127.50
6,000+$ 0.0391$ 234.60
9,000+$ 0.0375$ 337.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff100nA
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))200mV
Input Resistor10kΩ
Resistor Ratio0.25
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))300mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,0.2V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN
Number2 NPN (Pre-Biased)
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Introduction

AI Translation

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base - emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

AI Translation
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
  • These Devices are Pb - Free, Halogen Free/BFR Free and are RoHS Compliant